• DocumentCode
    1734735
  • Title

    High Performance, Low Complexity Vertical PNP BJT Optimization for a 0.24 μm SiGe BiCMOS Technology

  • Author

    Voegeli, B. ; Gray, P. ; Dahlstrom, M. ; Feilchenfeld, N. ; Rainey, B. ; Previti-Kelly, R. ; Onge, S. St ; Joseph, A. ; Dunn, J.

  • Author_Institution
    IBM Syst. & Technol. Group, Essex Junction, VT
  • fYear
    2007
  • Firstpage
    80
  • Lastpage
    82
  • Abstract
    An isolated vertical PNP BJT with fT of 28 GHz and f MAX of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors´ knowledge, the highest fT ever published for a homojunction PNP device, as well as for a modular PNP in a BiCMOS technology. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; 0.24 micron; 26 GHz; 28 GHz; BiCMOS technology; PNP BJT; SiGe; BiCMOS integrated circuits; CMOS process; CMOS technology; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Isolation technology; Silicon carbide; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    0-7803-9764-9
  • Electronic_ISBN
    0-7803-9765-7
  • Type

    conf

  • DOI
    10.1109/SMIC.2007.322774
  • Filename
    4117330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1734735