Title :
Design of a Distributed Amplifier with On-chip ESD Protection Circuit in 130 nm SOI CMOS Technology
Author :
Si Moussa, M. ; El Kaamouchi, M. ; Wybo, G. ; Bens, A. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
Abstract :
A fully integrated common source distributed amplifier (CSDA) with ESD protection, designed and fabricated in 130 nm SOI CMOS technology, is presented. This CSDA requires a chip area of 0.75 mm2 . A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4 V supply voltage with a measured power consumption of 66 mW. Low capacitance diode is used for electrostatic discharge (ESD) protection for the RF input pin without altering the original design of the CSDA. The CSDA has an ESD protection level up to 1.45 A transmission line pulse (TLP) current, corresponding to 2 kV human body model (HBM) stress
Keywords :
CMOS integrated circuits; distributed amplifiers; electrostatic discharge; microwave amplifiers; microwave integrated circuits; semiconductor diodes; silicon-on-insulator; 1.4 V; 130 nm; 30 GHz; 4.5 dB; 66 mW; SOI CMOS technology; distributed amplifier; electrostatic discharge; low capacitance diode; on-chip ESD protection circuit; CMOS technology; Distributed amplifiers; Electrostatic discharge; Electrostatic measurements; Gain measurement; Integrated circuit technology; Power measurement; Protection; Semiconductor device measurement; Transmission line measurements;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on
Conference_Location :
Long Beach, CA
Print_ISBN :
0-7803-9765-7
Electronic_ISBN :
0-7803-9765-7
DOI :
10.1109/SMIC.2007.322782
