Title :
Channel design for wide system bandwidth in a TSV based 3D IC
Author :
Kim, Heegon ; Cho, Jonghyun ; Kim, Joohee ; Kim, Myunghoi ; Lee, Junho ; Lee, Hyungdong ; Park, Kunwoo ; Kim, Joungho ; Pak, Jun So
Author_Institution :
TERA Lab., KAIST, Daejeon, South Korea
Abstract :
In this paper, the design guidance of the channel in a through-silicon via (TSV) based three-dimensional integrated circuit (3D IC) for wide system bandwidth was described. First, the multi-stacked TSV and the silicon interposer interconnects were modeled for efficient analysis. Based on these developed models of the 3D IC interconnect, the multi-stacked TSV and the silicon interposer interconnect for wide single-channel bandwidths were analyzed. Finally, the optimized structure of the 3D IC interconnect for wide system bandwidth was obtained by consideration with the number of I/Os. This design guidance can be extended to different 3D IC system by using the analysis of the interconnect characteristic of TSV and the silicon interposer.
Keywords :
integrated circuit design; integrated circuit interconnections; silicon; three-dimensional integrated circuits; 3D IC interconnection; Si; channel design; interconnect characteristic; multistacked TSV; silicon interposer interconnects; three-dimensional integrated circuit; through-silicon via; wide system bandwidth; Bandwidth; Capacitance; Integrated circuit modeling; Silicon; Three dimensional displays; Through-silicon vias;
Conference_Titel :
Signal Propagation on Interconnects (SPI), 2011 15th IEEE Workshop on
Conference_Location :
Naples
Print_ISBN :
978-1-4577-0466-6
Electronic_ISBN :
978-1-4577-0465-9
DOI :
10.1109/SPI.2011.5898840