Abstract :
The program started with a challenging keynote on how end user factors that can influence system design methodology. In keeping with new semiconductor technology, tutorials were given on Cu electromigration, ultra-thin oxides, burn-in strategies as well as hot-carrier degradation and modeling. These were followed by technical papers on Cu and Al metallization reliability as well as low-k dielectrics, plasma damage, ultrathin oxides, hot carriers and product reliability. These papers emphasized the importance of customer product reliability requirements, reliability test structures, reliability models, identification of reliability effects and wafer level reliability. Discussion groups, a popular participatory evening activity, continued the technical discussions on copper and low-k dielectric electromigration testing, ultra-thin oxides, fast wafer level reliability monitoring and hot carriers. They were well led by knowledgeable and competent moderators. Special interest groups (SIGs) were also quite active, with topics ranging from oxide reliability and burn-in methodologies to interconnect reliability and wafer level reliability implementation
