Comparison of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) by using hard X-ray photoelectron spectroscopy (HX-PES)

We measured HX-PES (Si 1s) of ultra low energy ion implantation (I/I) samples combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si-Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge-PAI+I/I sample. Both Ge-PAI+I/I and PD sample showed excellent recrystallization after spike RTA.bonding.