Reliability test results for W FIB interconnect structures

Author

Zaragoza, M. ; Zhang, Jingwei ; Abramo, M.

Author_Institution

Cadence Design Syst. Inc., San Diego, CA, USA

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

14

Lastpage

19

Abstract

The reliability of W-based FIB modifications is assessed through the stress testing of FIB test structures. Three structure types were created that examined the integrity of vias, lines, and FIB-deposited insulator material. Structures were stressed at 125°C with no current for 3900 hours and 170°C with current for 2700 hours. Structures were also temperature cycled for 2000 cycles. Electrical resistance remained stable throughout all stress conditions and there was no evidence of degradation to the FIB-deposited W or SiO₂ films or to the Al lines. The only failure observed was with the insulator material due to misalignment of the structure

Keywords

electrical resistivity; failure analysis; focused ion beam technology; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; tungsten; 125 C; 170 C; 2700 h; 3900 h; Al; Al lines; FIB test structures; FIB-deposited insulator material; SiO₂; SiO₂ films; W; W FIB interconnect structures; W-based FIB modifications; electrical resistance; failure; integrity; lines; misalignment; reliability test; stress testing; vias; Artificial intelligence; Circuit testing; Conductors; Costs; Debugging; Dielectric films; Integrated circuit interconnections; Passivation; Stress; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1999. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-5649-7

Type

conf

DOI

10.1109/IRWS.1999.830553

Filename

830553