• DocumentCode
    1735945
  • Title

    On the bimodal lognormal distribution of electromigration lifetimes

  • Author

    Fischer, A.H.

  • fYear
    1999
  • fDate
    6/21/1905 12:00:00 AM
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    The accurate prediction of electromigration-limited lifetime based on high current density and temperature stressing is one of the key issues in reliability methodology. Especially the choice of the underlying distribution model is of importance since extrapolated life times for operation conditions depend on it. Two sets of electromigration lifetime data gathered from submicron via-line structures an presented which do not show log-normal failure behaviour. They can be fitted assuming a bimodal lognormal distribution. The intention of this paper is to characterize different bimodal lognormal distributions, to review some statistical basics and to give a proposal to handle bimodal failure distributions for lifetime projection
  • Keywords
    carrier lifetime; current density; electromigration; semiconductor device reliability; bimodal lognormal distribution; electromigration lifetimes; high current density; lifetime projection; log-normal failure behaviour; reliability methodology; submicron via-line structures; temperature stressing; underlying distribution model; Current density; Electromigration; Failure analysis; Predictive models; Shape; Statistical analysis; Stress; Temperature dependence; Temperature distribution; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 1999. IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-5649-7
  • Type

    conf

  • DOI
    10.1109/IRWS.1999.830581
  • Filename
    830581