Title :
Measurement and modeling of a new width dependence of NMOSFET degradation
Author :
Schuler, F. ; Kowarik, O. ; Keitel-Schulz, D.
Author_Institution :
University of Bundeswehr Munich
Keywords :
Degradation; Fabrication; Hot carrier effects; Hot carriers; Interface states; Lead compounds; MOSFET circuits; Oxidation; Shearing; Threshold voltage;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888190
