Title :
Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET
Author :
Islam, Md Shariful ; Alam, Md Nur Kutubul ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
Effect of gate length on the ballistic performance of nanoscale In0.2Ga0.8Sb double gate n-MOSFET is studied. Non equilibrium greens function (NEGF) method is used to find the current-voltage characteristics. Well known SILVACO´s ATLAS device simulation package is used to carry out the simulation. Three different gate length, 10nm, 13nm and 15 nm are analyzed. The simulation result shows that the drain current increases and the threshold voltage decreases with decrease in gate length. But the subthreshold swing increases with it. It reveals that the current voltage characteristic gets better but the electrostatic control of the gate becomes poorer with decrease in gate length.
Keywords :
Green´s function methods; MOSFET; ballistics; gallium compounds; indium compounds; nanoelectronics; InGaSb; NEGF method; SILVACO ATLAS device simulation package; ballistic performance; current-voltage characteristics; drain current; electrostatic control; gate length effect; nanoscale double gate n-MOSFET; nonequilibrium Greens function method; size 10 nm; size 13 nm; size 15 nm; subthreshold swing; threshold voltage; Logic gates; MOSFET; Performance evaluation; Silicon; Threshold voltage; Double gate; Gate length; InGaSb MOS; NEGF;
Conference_Titel :
Informatics, Electronics & Vision (ICIEV), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-5179-6
DOI :
10.1109/ICIEV.2014.6850707
