Title :
Hot wall beam epitaxial growth of PbTe layers on BaF2/CaF2/Si(111) substrates
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Kishinev, Moldova
Abstract :
PbTe(111) thin films were grown by the hot wall beam epitaxy (HWBE) technique on Se(111) substrates using intermediate BaF2/CaF2 buffers grown by MBE. The best PbTe layers exhibit high resolution X-ray rocking curve linewidth of about 130 arcsec, low temperature Hall mobility of 8×105 cm 2/Vs, and an excellent surface morphology with the roughness of a few angstrom as determined by atomic force microscopy (AFM). The results indicate that high-quality PbTe films can be obtained on fluoride covered Si(111) substrates by simple and cheap HWBE method
Keywords :
Hall mobility; IV-VI semiconductors; X-ray spectroscopy; atomic force microscopy; barium compounds; calcium compounds; chalcogenide glasses; elemental semiconductors; infrared detectors; lead compounds; semiconductor epitaxial layers; semiconductor growth; silicon; surface topography; vapour phase epitaxial growth; HWBE; IR detectors; MBE; PbTe-BaF2-CaF2-Si; atomic force microscopy; chalcogenide semiconductors; high resolution X-ray rocking curve linewidth; hot wall beam epitaxial growth; intermediate buffers; low temperature Hall mobility; surface morphology; Atomic force microscopy; Epitaxial growth; Hall effect; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface roughness; Temperature; Transistors;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890206
