Title :
Back illuminated solar-blind photodetectors
Author :
Collins, C.J. ; Li, T. ; Lambert, D.J. ; Wong, M.M. ; Yang, B. ; Beck, A.L. ; Dupuis, R.D. ; Campbell, J.C.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
The desire for shorter-wavelength devices has drawn attention to AlxGa1-xN devices, which are sensitive in the ultraviolet (UV) regime. In particular, for military applications requiring detection of objects moving in front of the sun, a photodetector must have a photoresponse only in the solar-blind region (280 nm) where the atmosphere absorbs most of the ultraviolet radiation emitted by the sun. In this paper we report on back-illuminated solar-blind devices using Al0.6Ga0.4N as window layers and Al0.4Ga0.6N as absorption layers
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; optical windows; photodetectors; photodiodes; 280 nm; Al0.4Ga0.6N; Al0.4Ga0.6N absorption layers; Al0.6Ga0.4N; Al0.6Ga0.4N window layers; AlxGa1-xN devices; back illuminated solar-blind photodetectors; military applications; photodetector; photoresponse; solar-blind region; ultraviolet radiation; Commercialization; Dark current; Diode lasers; Electromagnetic wave absorption; Gallium nitride; Object detection; Photodiodes; Radiation detectors; Sun; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890685
