DocumentCode :
1739311
Title :
Picosecond optical pulse response of mid-infrared intersubband semiconductor optical amplifiers
Author :
Tang, J.M. ; Spencer, P.S. ; Shore, K.A.
Author_Institution :
Sch. of Inf., Wales Univ., Bangor, UK
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
187
Abstract :
A mid-IR semiconductor optical amplifier (SOA) exhibits four salient features including, for example, a near zero linewidth enhancement factor; a short (picosecond) carrier relaxation time, a strong ultrafast nonlinear refraction (UNR) and strong gain dispersion. Gain dispersion is significant for mid-IR SOAs because they have small material gain bandwidths of magnitude several meV which is comparable to the bandwidths of picosecond optical pulses. In this case, all spectral components of the short optical pulses may not be amplified by the same amount
Keywords :
high-speed optical techniques; infrared sources; laser theory; laser transitions; semiconductor device models; semiconductor optical amplifiers; mid-IR SOAs; mid-IR semiconductor optical amplifier; mid-infrared intersubband semiconductor optical amplifiers; near zero linewidth enhancement factor; picosecond optical pulse response; picosecond optical pulses; short optical pulses; short picosecond carrier relaxation time; small material gain bandwidths; strong gain dispersion; strong ultrafast nonlinear refraction; Bandwidth; Dispersion; Electrons; Equations; Optical materials; Optical pulses; Optical refraction; Optical wavelength conversion; Semiconductor optical amplifiers; Space vector pulse width modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
ISSN :
1092-8081
Print_ISBN :
0-7803-5947-X
Type :
conf
DOI :
10.1109/LEOS.2000.890738
Filename :
890738
Link To Document :
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