DocumentCode :
1739365
Title :
Quantum dot lasers
Author :
Bimberg, D. ; Ledentsov, N.N. ; Sellin, R. ; Ribbat, Ch. ; Mao, M. ; Grundmann, M. ; Ustinov, V.M. ; Zhukov, A.E. ; Kovsh, A.R. ; Alferov, Zh.I. ; Lott, J.A.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
302
Abstract :
We presents both edge emitting and surface emitting quantum dot laser research. Growth is by both MOCVD and MBE
Keywords :
MOCVD; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum dots; surface emitting lasers; InGaAs; MBE; MOCVD; edge emitting lasers; quantum dot lasers; surface emitting quantum dot laser; Charge carriers; Chemical lasers; Laser modes; Laser theory; Molecular beam epitaxial growth; Pulsed laser deposition; Quantum dot lasers; Surface emitting lasers; US Department of Transportation; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
ISSN :
1092-8081
Print_ISBN :
0-7803-5947-X
Type :
conf
DOI :
10.1109/LEOS.2000.890798
Filename :
890798
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1739365
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