Intrinsic performance of InGaAs-GaAs quantum dot lasers

Author

Thomson, John ; Smowton, Peter ; Summers, Huw ; Herrmann, Eugen ; Blood, Peter ; Hopkinson, Mark

Author_Institution

Dept. of Phys. & Astron., Cardiff Univ., UK

Volume

1

fYear

2000

fDate

2000

Firstpage

308

Abstract

We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well, 100 A wide, in a waveguide core region of AlGaAs with cladding layers of AlGaAs. Measurements have been made of the quasi-Fermi level separation, optical mode loss and gain spectra as a function of temperature by a single pass technique using a device with a segmented contact and of the spontaneous emission spectra using light emerging from a narrow window in the device top contact

Keywords

III-V semiconductors; gallium arsenide; indium compounds; ion recombination; laser cavity resonators; optical losses; quantum well lasers; semiconductor quantum dots; waveguide lasers; 100 A; AlGaAs; InGaAs dots; InGaAs-GaAs; InGaAs-GaAs quantum dot laser; cladding layers; gain spectra; intrinsic performance; narrow window; optical mode loss; quasi-Fermi level separation; segmented contact; single GaAs quantum well; single layer; single pass technique; spontaneous emission spectra; top contact; waveguide core region; Gain measurement; Gallium arsenide; Indium gallium arsenide; Laser modes; Loss measurement; Optical waveguides; Quantum dot lasers; Quantum well lasers; Stimulated emission; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890801

Filename

890801