Title :
[110] interface roughness and local electronic states in GaAs T-shaped quantum wires and wells
Author :
Yoshita, Masahiro ; Kondo, N. ; Sakaki, H. ; Baba, M. ; Akiyama, Hidenori
Author_Institution :
Inst. of Solid State Phys., Tokyo Univ., Japan
Abstract :
Summary form only given. The difficulty of T-shaped quantum wires (T-QWRs) and lasers formed by the cleaved-edge overgrowth (CEO) method, the two-step-growth method combined by in-situ cleavage, with molecular beam epitaxy lies in the growth of high-quality layers on [110] cleaved surfaces We investigated local electronic-states in GaAs T-QWRs and constituent GaAs [110] QWs using high-resolution micro photoluminescence techniques with a solid immersion lens (SIL).
Keywords :
gallium arsenide; interface roughness; lenses; molecular beam epitaxial growth; photoluminescence; semiconductor quantum wells; semiconductor quantum wires; GaAs; GaAs T-QWRs; GaAs T-shaped quantum wells; GaAs T-shaped quantum wires; [110] cleaved surfaces; [110] interface roughness; cleaved-edge overgrowth; constituent GaAs [110] QWs; high-quality layers; high-resolution micro photoluminescence techniques; in-situ cleavage; local electronic states; local electronic-states; molecular beam epitaxy; solid immersion lens; two-step-growth method; Atom optics; Carrier confinement; Gallium arsenide; Joining processes; Luminescence; Nanostructures; Optical coupling; Quantum dots; Resonance; Wires;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7
