Transmission response for defect localization in a 2-dimensional hexagonal photonic band gap crystal

Author

Reynolds, A.L. ; Krauss, Thomas F. ; Arnold, J.M.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2000

fDate

12-12 May 2000

Firstpage

14

Lastpage

15

Abstract

Summary form only given. Using the transfer matrix method the transmission co-efficient was determined for periodic defect states in a hexagonal lattice. The hexagonal lattice is created by removing cylindrical air holes from a background dielectric media with a dielectric constant of 7.9. This value was chosen to represent a half-wavelength thick GaAs waveguide from which the cylindrical holes were removed. The holes were chosen to have a radius to lattice spacing ratio of 0.35. Defects were created within the lattice by completely in-filling a superlattice of air cylinder sites with the same constituent waveguide material.

Keywords

III-V semiconductors; defect states; gallium arsenide; light transmission; optical waveguides; photonic band gap; 2-dimensional hexagonal photonic band gap crystal; 2D hexagonal photonic band gap crystal; GaAs; background dielectric media; cylindrical air holes; defect localization; dielectric constant; half-wavelength thick GaAs waveguide; hexagonal lattice; lattice spacing ratio; periodic defect states; transmission response; waveguide material; Copper; Dielectric materials; Nonlinear optics; Optical attenuators; Optical materials; Optical refraction; Optical variables control; Photonic band gap; Photonic crystals; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest

Conference_Location

San Francisco, CA, USA

ISSN

1094-5695

Print_ISBN

1-55752-608-7

Type

conf

Filename

901333