DocumentCode
1741989
Title
Saturation of THz-radiation from femtosecond-laser irradiated InAs in a high magnetic field
Author
Ohtake, H. ; Sakai, M. ; Zhenlin Liu ; Sarukura, N. ; Ono, S. ; Tsukamoto, T.
Author_Institution
Inst. of Molecular Sci., Myodaiji, Japan
fYear
2000
fDate
12-12 May 2000
Firstpage
192
Lastpage
193
Abstract
Summary form only given. We report saturation of THz-radiation from femtosecond-laser irradiated InAs in a high magnetic field We have found the saturation of the THz-radiation power on the applied magnetic field. The optimum magnetic field was found to be 3 T. We have also observed interesting dependence of the frequency and the spectral width of the radiation.
Keywords
III-V semiconductors; high-speed optical techniques; indium compounds; laser beam effects; magneto-optical effects; optical saturation; submillimetre wave measurement; 3 T; InAs; THz-radiation; THz-radiation power; applied magnetic field; femtosecond-laser irradiated; high magnetic field; optimum magnetic field; spectral width; Geometry; Laser mode locking; Laser theory; Magnetic fields; Optical pulses; Polarization; Saturation magnetization; Scalability; Silicon; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location
San Francisco, CA, USA
ISSN
1094-5695
Print_ISBN
1-55752-608-7
Type
conf
Filename
901969
Link To Document