Title :
Effect of substrate temperature on plasma parameter in high rate growth of stable amorphous silicon
Author :
Takai, Madoka ; Nishimoto, Tomonori ; Kondo, Michio ; Matsuda, Akihisa
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
Abstract :
Electron temperature, a key plasma parameter for obtaining highly stabilized a-Si:H in a plasma-enhanced chemical-vapor-deposition process, shows an anomalous behavior against film-preparation conditions such as substrate temperature, gas pressure, etc. It has been suggested that an electron-attachment process to higher silane molecules formed in the plasma is a cause of the anomalous behavior of electron temperature. Taking into account these effects for reducing the electron temperature in the plasma, stable a-Si:H having a saturated defect density after light soaking of 2×1016 cm-3 has been successfully prepared at high growth rate of 20 Å/sec
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; plasma CVD; plasma temperature; silicon; solar cells; Si:H; electron temperature; electron-attachment process; film-preparation conditions; gas pressure; high growth rate; high rate growth; higher silane molecules; highly stabilized a-Si:H; light soaking; plasma parameter; plasma-enhanced chemical-vapor-deposition process; saturated defect density; solar cells; stable amorphous silicon; substrate temperature; Amorphous silicon; Electrons; Plasma chemistry; Plasma density; Plasma measurements; Plasma properties; Plasma stability; Plasma temperature; Substrates; Temperature dependence;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915971
