Title :
1 cm×1 cm GaAs/AlGaAs MQW solar cells under one sun and concentrated sunlight
Author :
Aperathitis, E. ; Hatzopoulos, Z. ; Kayambaki, M. ; Foukaraki, V. ; Ruzinsky, M. ; aÁly, V. ; Sirotny, P. ; Varonides, A.C. ; Panayotatos, P.
Author_Institution :
Inst. of Electron. Structure & Laser, Foundation for Res. & Technol.-Hellas, Heraklion, Greece
Abstract :
GaAs/AlGaAs multiple quantum well (MQW) solar cells, with different ratios of well to barrier number and thickness, have been examined with temperature, between -10 and 100°C, and under AM1.5 illumination and 5× concentration conditions. The ideality factor of the diodes in the dark improved with temperature. Depending on the thickness of the wells and the barriers, the tunneling component of photocurrent dominated at low temperatures whereas thermionic currents were the dominant components at elevated temperatures or high illumination conditions. The fabrication of 1 cm×1 cm MQW solar cell, with the optimum QW geometry (number of wells and barriers thickness) exhibited Jsc=56.8 mA/cm2 and Voc =1.041 V at 5× concentration when compared to Jsc=10.2 mA/cm2 and Voc=1.009 V at AM1.5 illumination conditions
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconductivity; quantum well devices; solar cells; solar energy concentrators; -10 to 100 C; 1 cm; 1.009 V; 1.041 V; 5× concentration; AM1.5 illumination; GaAs-AlGaAs; GaAs/AlGaAs MQW solar cells; MBE growth; concentrated sunlight; diode ideality factor; elevated temperatures; high illumination conditions; multiple quantum well solar cells; one sun; photocurrent tunneling component; thermionic currents; thickness; well to barrier number; Diodes; Fabrication; Gallium arsenide; Lighting; Photoconductivity; Photovoltaic cells; Quantum well devices; Sun; Temperature dependence; Tunneling;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916089
