DocumentCode
1744455
Title
Radiative recombination in InP quantum dots on GaP
Author
Hatami, F. ; Masselink, M.T. ; Schrottke, L.
Author_Institution
Dept. of Phys., Humboldt-Univ., Berlin, Germany
fYear
2000
fDate
2000
Firstpage
129
Lastpage
131
Abstract
We describe the growth and optical emission from strained InP quantum dots grown on GaP using gas-source molecular beam epitaxy. Self-organised island formation takes place for InP coverage greater than 1.8 monolayers on the (100) GaP surface. Intense photoluminescence from the dots are observed at about 2.0 eV
Keywords
III-V semiconductors; chemical beam epitaxial growth; electron-hole recombination; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; 2 eV; GaP; GaP substrate; GaP(100) surface; InP coverage; InP quantum dots; InP-GaP; gas-source molecular beam epitaxy; monolayers; optical emission; photoluminescence; radiative recombination; self-organised island formation; strained InP quantum dot growth; strained InP quantum dots; Atomic force microscopy; Indium phosphide; Multilevel systems; Optical buffering; Photoluminescence; Quantum dot lasers; Quantum dots; Radiative recombination; Stimulated emission; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location
Tehran
Print_ISBN
964-360-057-2
Type
conf
DOI
10.1109/ICM.2000.916429
Filename
916429
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