DocumentCode
1744591
Title
Minimisation of wiring inductance in high power IGBT inverter
Author
Lounis, Z. ; Rasoanarivo, Ignace ; Davat, B.
Author_Institution
CNRS UPRESA, Inst. Nat. Polytech. de Lorraine, Vandoeuvre-les-Nancy, France
Volume
2
fYear
2001
fDate
2001
Abstract
Summary form only given as follows. The wiring inductance is one of the main causes limiting the use of the inverter, in hard commutation mode, particularly when voltage, current and switching frequency are increased. The busbar technology is the means that allows low wiring inductance between DC source and power switches to be reached in spite of relatively long connections. This paper deals with studies of busbar structure applied to the high power inverters in order to improve their performances. Two structures of wiring are tested; the traditional and and busbar technology. The experimental and simulation results show that this last technique permits very low wiring inductance to be obtained so that no snubber circuits are needed
Keywords
busbars; commutation; inductance; insulated gate bipolar transistors; invertors; wiring; DC source; busbar technology; current; hard commutation mode; high power IGBT inverter; overvoltage; power switches; relatively long connections; switching frequency; voltage; wiring inductance minimisation; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Inverters; Minimization; Snubbers; Switching frequency; Voltage; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Engineering Society Winter Meeting, 2001. IEEE
Conference_Location
Columbus, OH
Print_ISBN
0-7803-6672-7
Type
conf
DOI
10.1109/PESW.2001.916981
Filename
916981
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