• DocumentCode
    1744591
  • Title

    Minimisation of wiring inductance in high power IGBT inverter

  • Author

    Lounis, Z. ; Rasoanarivo, Ignace ; Davat, B.

  • Author_Institution
    CNRS UPRESA, Inst. Nat. Polytech. de Lorraine, Vandoeuvre-les-Nancy, France
  • Volume
    2
  • fYear
    2001
  • fDate
    2001
  • Abstract
    Summary form only given as follows. The wiring inductance is one of the main causes limiting the use of the inverter, in hard commutation mode, particularly when voltage, current and switching frequency are increased. The busbar technology is the means that allows low wiring inductance between DC source and power switches to be reached in spite of relatively long connections. This paper deals with studies of busbar structure applied to the high power inverters in order to improve their performances. Two structures of wiring are tested; the traditional and and busbar technology. The experimental and simulation results show that this last technique permits very low wiring inductance to be obtained so that no snubber circuits are needed
  • Keywords
    busbars; commutation; inductance; insulated gate bipolar transistors; invertors; wiring; DC source; busbar technology; current; hard commutation mode; high power IGBT inverter; overvoltage; power switches; relatively long connections; switching frequency; voltage; wiring inductance minimisation; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Inverters; Minimization; Snubbers; Switching frequency; Voltage; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Engineering Society Winter Meeting, 2001. IEEE
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    0-7803-6672-7
  • Type

    conf

  • DOI
    10.1109/PESW.2001.916981
  • Filename
    916981