The influence of substrate temperature and the anneal ambient on the redistribution of arsenic implanted into silicon at ultra-low energy

Author

Whelan, S. ; Armour, D.G. ; van den Berg, J.A.

Author_Institution

Joule Phys. Lab., Salford Univ.

fYear

2000

fDate

2000

Firstpage

178

Lastpage

181

Abstract

The effects of implant temperature and anneal gas environment on the redistribution of arsenic implanted into silicon at 2.5 keV to high concentrations has been studied. The as-implanted damage structures were observed to be strongly dependent on implant temperature. The transient enhanced diffusion observed during 10 second anneals was found to be highly dependent on the presence of oxygen. When annealing was carried out in pure nitrogen, significant loss of dopant occurred and the TED was not dependent on implant temperature. In an environment containing oxygen, all the dopant was retained and more extensive, implant temperature dependent redistribution was observed

Keywords

annealing; arsenic; diffusion; elemental semiconductors; ion implantation; semiconductor doping; silicon; 2.5 keV; Si:As; anneal gas environment; annealing; damage structures; implant redistribution; implant temperature; implanted As; substrate temperature; transient enhanced diffusion; Foundries; Implants; Nitrogen; Physics; Rapid thermal annealing; Rapid thermal processing; Scattering; Silicon; Solids; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924119

Filename

924119