• DocumentCode
    1745596
  • Title

    Enhancing B+ ion current by adding MgO to the chamber material of a microwave ion source

  • Author

    Sakudo, Noriyuki ; Ito, Hiroyuki ; Ito, Seiichi ; Matsunaga, Yasuhiko ; Hayashi, Keiji ; Nishiyama, Yoko ; Miyamoto, Atsushi ; Yutani, Masatoshi ; Komatsu, Kazuhiro

  • Author_Institution
    Kanazawa Inst. of Technol., Ishikawa, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    520
  • Lastpage
    523
  • Abstract
    It is experimentally shown that increasing the electron-emission coefficient of the chamber material can enhance B+ ion current from a microwave ion source. The plasma potential dependence on the coefficient is theoretically studied. As the preliminary test, the potential differences between the chamber wall and a test surface with different coefficient of the electron emission and it is proved that the potential is lowered by coating MgO on the test surface. Then we tested some chambers with different amounts of MgO added to by installing them in the microwave ion source, which was mounted on a commercial beam line of Applied Materials xR80. The result obtained so far shows that B+ ion current is considerably enhanced with the chamber of 5% MgO
  • Keywords
    ion sources; plasma density; secondary electron emission; B; B+ ion current; MgO; MgO coating; electron-emission coefficient; microwave ion source; plasma potential; Coatings; Electron emission; Ion sources; Plasma accelerators; Plasma applications; Plasma density; Plasma materials processing; Plasma sheaths; Plasma sources; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924202
  • Filename
    924202