Cryogenic temperature dependence and modelling of RF-noise parameters of carbon doped InP/InGaAs HBT

Author

Agethen, M. ; Schuller, S. ; Velling, P. ; Brockerhoff, W. ; Tegude, F.J.

Author_Institution

Dept. of Solid-State Electron., Gerhard-Mercator-Univ. Duisburg, Germany

fYear

2001

fDate

2001

Firstpage

212

Lastpage

215

Abstract

The RF-performance of InP/InGaAs HBTs strongly depends on the ambient temperature. In this work we present the RF-noise parameters (minimum noise figure F_min, equivalent noise resistance R_n and optimum generator reflection coefficient Γ__opt) in dependence on bias condition and ambient device temperature in a range from 380 K down to 15 K. The measurement set-up used is described. Modelling of RF-parameters of carbon doped InP/InGaAs HBT is presented using a consistent small-signal and RF-noise parameter equivalent circuit

Keywords

III-V semiconductors; UHF bipolar transistors; carbon; cryogenic electronics; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor device noise; 15 to 380 K; 45 MHz to 40 GHz; InP-InGaAs:C; InP/InGaAs:C HBT; RF-noise parameters; ambient device temperature; bias condition; cryogenic temperature dependence; equivalent noise resistance; minimum noise figure; modelling; optimum generator reflection coefficient; small-signal equivalent circuit; Acoustic reflection; Cryogenics; Electrical resistance measurement; Indium gallium arsenide; Indium phosphide; Noise figure; Noise generators; Optimized production technology; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929095

Filename

929095