Title :
Population inversion in an optically-pumped single quantum well
Author :
Green, T.J. ; Xu, W.
Author_Institution :
Dept. of Mater. Eng., Wollongong Univ., NSW, Australia
Abstract :
An optically-pumped intersubband laser generator is proposed in which the continuum states above an Al0.2Ga0.8As-GaAs-Al0.2Ga0.8 As single quantum well with a width of L=17 nm serve as the highest level in a four-level laser system. The design allows much greater flexibility in the choice of pumping source and simplifies considerably the device fabrication. We have obtained the electrode subband structure of the proposed device and utilized a simple rate equation approach to examine the electron density in different states under optical pumping
Keywords :
III-V semiconductors; aluminium compounds; electron density; gallium arsenide; interface states; laser theory; optical pumping; population inversion; quantum well lasers; semiconductor device models; semiconductor quantum wells; 17 nm; Al0.2Ga0.8As-GaAs-Al0.2Ga 0.8As; Al0.2Ga0.8As-GaAs-Al0.2Ga 0.8As single quantum well; continuum states; device fabrication; electrode subband structure; electron density; four-level laser system; optical pumping; optically-pumped intersubband laser generator; optically-pumped single quantum well; population inversion; pumping source; rate equation approach; Electrons; Gallium arsenide; Laser excitation; Laser transitions; Optical pumping; Optical superlattices; Pump lasers; Quantum cascade lasers; Quantum well lasers; Superconducting materials;
Conference_Titel :
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-5814-7
DOI :
10.1109/SIM.2000.939231
