• DocumentCode
    1749309
  • Title

    Investigation of the characteristic changes on the SrTiO3:Pr,Al,Ga phosphors during the low voltage electron irradiation

  • Author

    Kim, Jin Young ; You, Yong Chan ; Duk Young Jeon ; Yang, Hong-Gun

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Tech., Taejon, South Korea
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    213
  • Lastpage
    214
  • Abstract
    Basic experimental results of the SrTiO3:Pr,Al,Ga phosphor degradation are presented. Especially, based on the AES and XPS results it is understood that the prolonged low voltage and high current density of electron beam cause the characteristic change formed on the phosphor surface ((1) Accumulation of the overlaying carbon, (2) Damage of the crystal structure), being responsible for the rapid degradation of low voltage CL of the SrTiO3:Pr,Al,Ga phosphors
  • Keywords
    Auger electron spectra; X-ray photoelectron spectra; aluminium; cathodoluminescence; electron beam effects; gallium; phosphors; praseodymium; strontium compounds; AES; SrTiO3:Pr,Al,Ga; SrTiO3:Pr,Al,Ga phosphor; XPS; carbon overlayer; cathodoluminescence; crystal structure; low voltage electron irradiation; surface damage; Current density; Degradation; Displays; Electron beams; Fluorescence; Low voltage; Luminescence; Materials science and technology; Phosphors; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
  • Conference_Location
    Davis, CA
  • Print_ISBN
    0-7803-7197-6
  • Type

    conf

  • DOI
    10.1109/IVMC.2001.939729
  • Filename
    939729