DocumentCode
1749309
Title
Investigation of the characteristic changes on the SrTiO3:Pr,Al,Ga phosphors during the low voltage electron irradiation
Author
Kim, Jin Young ; You, Yong Chan ; Duk Young Jeon ; Yang, Hong-Gun
Author_Institution
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Tech., Taejon, South Korea
fYear
2001
fDate
2001
Firstpage
213
Lastpage
214
Abstract
Basic experimental results of the SrTiO3:Pr,Al,Ga phosphor degradation are presented. Especially, based on the AES and XPS results it is understood that the prolonged low voltage and high current density of electron beam cause the characteristic change formed on the phosphor surface ((1) Accumulation of the overlaying carbon, (2) Damage of the crystal structure), being responsible for the rapid degradation of low voltage CL of the SrTiO3:Pr,Al,Ga phosphors
Keywords
Auger electron spectra; X-ray photoelectron spectra; aluminium; cathodoluminescence; electron beam effects; gallium; phosphors; praseodymium; strontium compounds; AES; SrTiO3:Pr,Al,Ga; SrTiO3:Pr,Al,Ga phosphor; XPS; carbon overlayer; cathodoluminescence; crystal structure; low voltage electron irradiation; surface damage; Current density; Degradation; Displays; Electron beams; Fluorescence; Low voltage; Luminescence; Materials science and technology; Phosphors; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939729
Filename
939729
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