Title :
Effective compliance of 0.9PbMg0.33Nb0.66O 3 (PMN)-0.1 PbTiO3(PT) ceramics
Author :
Lejeune, M. ; Kurutcharry, S. ; Oudjedi, M.
Author_Institution :
Lab. SPCTS, Ecole Nat. Superieure de Ceramique Industrielle, Limoges, France
Abstract :
Evolutions of saturation and hysteresis of 0.9PMN-0.1PT field-induced strain curves with temperature (-8°C, 45°C), compressive stress (0, -30 MPa) and frequency of the electric field (20 mHz, 1 kHz) are well described through tangent hyperbolic formulations. The 0.9PMN-0.1 PT effective compliance deduced from the strain formulations is strongly dependent upon the electric field, the compressive stress and the temperature. Moreover, the corresponding variations of 0.9PMN-0.1PT apparent compliance are correlated to a nucleation and growth mechanism of polar clusters inside a paraelectric matrix: in fact, by considering mixed models for the effective compliance of the material, we succeed in evaluating the polar phase volume fraction according to the range of temperature, the amplitudes of compressive stress and electric field. Finally, some promising routes to integrating 0.9PMN-0.1PT ceramic into adaptive devices are introduced
Keywords :
elastic constants; electromechanical effects; ferroelectric ceramics; ferroelectric transitions; lead compounds; -8 to 45 degC; 20 mHz to 1 kHz; PMN-PT ceramics; PMN-PbTiO3; PbMg0.33Nb0.66O3-PbTiO3 ; PbMgO3NbO3-PbTiO3; apparent compliance; compressive stress dependence; effective compliance; electric field frequency dependence; field-induced strain curves; hysteresis; paraelectric matrix; polar clusters nucleation/growth mechanism; polar phase volume fraction; saturation; tangent hyperbolic formulations; temperature dependence; Capacitive sensors; Ceramics; Compressive stress; Frequency; Hysteresis; Niobium; Temperature dependence; Temperature distribution; Temperature sensors; Uniaxial strain;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941609