MM-wave noise characterization of 40nm CMOS transistor for up to 67 GHz

Author

Xi Sung Loo ; Nguyen, Hien ; Zhihong Liu ; Chew, Johnny Kok Wai ; Misljenovic, Neven ; Hosein, Bryan ; Tsironis, Christos ; Jen Shuang Wong ; Wai Heng Chow

Author_Institution

GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore

fYear

2014

fDate

1-3 June 2014

Firstpage

191

Lastpage

194

Abstract

This noise modelling, characterization and measurement from 0.5 GHz to 67 GHz is reported for the first time in coaxial. RF CMOS devices fabricated on GLOBALFOUNDRIES´ 40nm technology are measured with Focus Microwaves noise system for full frequency span of 67 GHz. Experimental results agree well with theoretical and modeling results.

Keywords

CMOS integrated circuits; field effect MIMIC; integrated circuit modelling; integrated circuit noise; millimetre wave transistors; transistor circuits; CMOS transistor; GLOBALFOUNDRIES technology; MM-wave noise characterization; RF CMOS devices; focus microwave noise system; frequency 0.5 GHz to 67 GHz; noise modelling; size 40 nm; CMOS integrated circuits; Frequency measurement; Noise; Noise figure; Semiconductor device modeling; Transistors; CMOS technology; millimeter wave transistors; noise measurement; semiconductor device modeling; thermal noise; tuners;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2014 IEEE

Conference_Location

Tampa, FL

ISSN

1529-2517

Print_ISBN

978-1-4799-3862-9

Type

conf

DOI

10.1109/RFIC.2014.6851694

Filename

6851694