DocumentCode
1751879
Title
Dynamics of microwave FET behaviour
Author
Parker, Anthony ; Rathmell, James
Author_Institution
Collaborative Nonlinear Electonics Res. Fac., Macquarie Univ., North Ryde, NSW, Australia
fYear
2001
fDate
2001
Abstract
The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed
Keywords
high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; HEMT; dispersion; dynamic characteristics; microwave FET; nonthermal effects; pulsed-bias measurement system; thermal effects; Microwave FETs; Microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2001. Tutorial Guide: ISCAS 2001. The IEEE International Symposium on
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-7113-5
Type
conf
DOI
10.1109/TUTCAS.2001.946944
Filename
946944
Link To Document