• DocumentCode
    1751879
  • Title

    Dynamics of microwave FET behaviour

  • Author

    Parker, Anthony ; Rathmell, James

  • Author_Institution
    Collaborative Nonlinear Electonics Res. Fac., Macquarie Univ., North Ryde, NSW, Australia
  • fYear
    2001
  • fDate
    2001
  • Abstract
    The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed
  • Keywords
    high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; HEMT; dispersion; dynamic characteristics; microwave FET; nonthermal effects; pulsed-bias measurement system; thermal effects; Microwave FETs; Microwave devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2001. Tutorial Guide: ISCAS 2001. The IEEE International Symposium on
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-7113-5
  • Type

    conf

  • DOI
    10.1109/TUTCAS.2001.946944
  • Filename
    946944