Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory

Author

Ozen, Mustafa ; Acar, Mustafa ; van der Heijden, Mark P. ; Apostolidou, M. ; Leenaerts, Domine M. W. ; Jos, Rik ; Fager, Christian

Author_Institution

Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2014

fDate

1-3 June 2014

Firstpage

243

Lastpage

246

Abstract

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; semiconductor materials; wideband amplifiers; BiCMOS class-E SMPA; collector efficiency; continuous class-E mode theory; frequency 1.3 GHz to 2.2 GHz; generic wideband SMPA design approach; wideband watt-level silicon-germanium BiCMOS switching mode power amplifier; BiCMOS integrated circuits; CMOS integrated circuits; Harmonic analysis; Impedance; Power generation; Silicon germanium; Switches; CMOS; SiGe; class-e; efficiency; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2014 IEEE

Conference_Location

Tampa, FL

ISSN

1529-2517

Print_ISBN

978-1-4799-3862-9

Type

conf

DOI

10.1109/RFIC.2014.6851709

Filename

6851709