3D architecture silicon sensors: test results: future plans

The first silicon sensors with a three-dimensional architecture, in which the n and p electrodes penetrate through the entire substrate, have been successfully fabricated. The fabrication method, results covering electrical properties, tests with infrared microbeams, and detection of beta, x- and gamma rays are covered, as is their satisfactory operation after irradiation with up to 10E15 55 MeV protons/sq. cm. We also describe ongoing work with active edges, in which etched sensor edges form one electrode, and which should be sensitive to within a micron of the physical edges. Finally, plans for the next fabrication run, and possible future applications are covered. These include formation of mosaic detectors for the synchrotron x-rays used to determine the three-dimensional shape of protein molecules