Radiation-hardness of VA1 with sub-micron process technology

Author

Yokoyama, M. ; Aihara, H. ; Hazumi, M. ; Ishino, H. ; Kaneko, J. ; Li, Y. ; Marlow, D. ; Mikkelsen, S. ; Nygard, E. ; Tajima, H. ; Talebi, J. ; Varner, G. ; Yamamoto, Hiroshi

Author_Institution

Dept. of Phys., Tokyo Univ., Japan

Volume

2

fYear

2000

fDate

2000

Firstpage

42632

Abstract

We have studied the radiation hardness of the VA1, a Viking-architecture preamplifier VLSI chip. LSI samples are fabricated by 0.8 μm and 0.35 μm process technology to improve radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8 μm technology. Little degradation of noise and gain is observed to total dose of 20 Mrad for the VA1 fabricated by the 0.35 μm technology. We find that the radiation hardness improves at a scaling of better than t_ox^-6 (t_ox: oxide thickness). Basic parameters of MOSFETs are also studied to understand a mechanism of the radiation damage in the VA1

Keywords

MOS analogue integrated circuits; VLSI; nuclear electronics; position sensitive particle detectors; preamplifiers; radiation effects; radiation hardening; silicon radiation detectors; 20 Mrad; Belle Si vertex detector upgrade; MOSFET; Si; VA1; Viking-architecture preamplifier VLSI chip; radiation damage; radiation hardness; submicron process technology; Degradation; Electron traps; FETs; Ionizing radiation; Large scale integration; Physics; Radiation detectors; Threshold voltage; Transconductance; White noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2000 IEEE

Conference_Location

Lyon

ISSN

1082-3654

Print_ISBN

0-7803-6503-8

Type

conf

DOI

10.1109/NSSMIC.2000.949863

Filename

949863