DocumentCode
1752337
Title
Driving spectral resolution to the noise limit in semiconductor gamma detector arrays
Author
Lachish, Uri
Author_Institution
Guma Sci., Rehovot, Israel
Volume
2
fYear
2000
fDate
2000
Abstract
Shape time adjustment of a standard detector circuit improves the resolution of a single pixel of a detector array to the noise limit. Steady flow of gamma generated charge, in a detector bulk, induces fast signal build-up, as the charge arrives near to a single pixel. The build-up period is shorter than the electron transition time from contact to contact. The circuit shape time response is adjusted to overlap with the fast buildup period. The shape time determines a distance range, extending from the negative contact, where the detector signal does not depend on the position of photon absorption. The noise limited line width is consistent with published data of higher line resolution than predicted by the small pixel theory
Keywords
gamma-ray detection; nuclear electronics; pulse shaping circuits; semiconductor counters; semiconductor device noise; circuit shape time response; electron transition time; fast signal build-up; negative contact; noise limit; photon absorption; semiconductor gamma detector arrays; shape time adjustment; single pixel resolution; small pixel theory; spectral resolution; Circuit noise; Electrons; Gamma ray detection; Gamma ray detectors; Noise shaping; Semiconductor device noise; Sensor arrays; Shape; Signal generators; Signal resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location
Lyon
ISSN
1082-3654
Print_ISBN
0-7803-6503-8
Type
conf
DOI
10.1109/NSSMIC.2000.949893
Filename
949893
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