Study on Electric Characteristic of IGBT at Different Junction Temperature

As the electric performances of semiconductor devices are tightly related to their junction temperature, the research on electrical parameters characteristic at different junction temperature is a significant meaning to improve application reliability of IGBT. On the one hand, junction temperature is a key factor to influence electrical parameters of IGBT. On the other hand, electrical parameters can also influence junction temperature by influencing power dissipation. In the period of low temperature this interactional relationship between electrical parameters and junction temperature is not evident, but when to high temperature the interaction becomes tight and is not ought to be neglected. The interaction named as thermo-electric coupling is likely to bring thermal runaway during blocking and causes a high fluctuant temperature with a small current under near the rated current or allowed maximum temperature condition which is ease to exceed the allowed temperature.