DocumentCode :
1753873
Title :
Study on Electric Characteristic of IGBT at Different Junction Temperature
Author :
Bo Wang ; Tang, Yong ; Chen, Ming
Author_Institution :
Nat. Key Lab. for Vessel Integrated Power Syst. Technol., Naval Univ. of Eng., Wuhan, China
fYear :
2011
fDate :
25-28 March 2011
Firstpage :
1
Lastpage :
4
Abstract :
As the electric performances of semiconductor devices are tightly related to their junction temperature, the research on electrical parameters characteristic at different junction temperature is a significant meaning to improve application reliability of IGBT. On the one hand, junction temperature is a key factor to influence electrical parameters of IGBT. On the other hand, electrical parameters can also influence junction temperature by influencing power dissipation. In the period of low temperature this interactional relationship between electrical parameters and junction temperature is not evident, but when to high temperature the interaction becomes tight and is not ought to be neglected. The interaction named as thermo-electric coupling is likely to bring thermal runaway during blocking and causes a high fluctuant temperature with a small current under near the rated current or allowed maximum temperature condition which is ease to exceed the allowed temperature.
Keywords :
cooling; insulated gate bipolar transistors; power semiconductor devices; temperature; IGBT; electrical parameters; junction temperature; power dissipation; semiconductor devices; thermoelectric coupling; Insulated gate bipolar transistors; Junctions; Leakage current; Logic gates; Temperature; Temperature measurement; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2011 Asia-Pacific
Conference_Location :
Wuhan
ISSN :
2157-4839
Print_ISBN :
978-1-4244-6253-7
Type :
conf
DOI :
10.1109/APPEEC.2011.5749117
Filename :
5749117
Link To Document :
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