DocumentCode
1753949
Title
Optimization of CVD ClF3 non-plasma cleaning condition with advanced endpoint detection tool
Author
Hamaguchi, Yohei ; Fujii, Kazuyuki ; Shirakawa, Kenji ; Hanazaki, Minoru ; Katayama, Katsuo ; Toyota, Masato
Author_Institution
Renesas Electron. Corp., Hitachinaka, Japan
fYear
2010
fDate
18-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
The advanced EPD (Endpoint Detection) tool was developed originally and its application for NF3 remote plasma cleaning was reported in ISSM2008. In this paper, we applied the tool to ClF3 gas cleaning and successfully detected the endpoint. The validity of the endpoint was verified by photo luminescence measurement and dependence on deposition thickness. Furthermore, ClF3 gas cleaning condition was optimized for mass production WSi (tungsten silicide) CVD with the tool.
Keywords
chemical vapour deposition; photoluminescence; tungsten compounds; CVD ClF3 non-plasma cleaning condition; ClF3 gas cleaning; NF3 remote plasma cleaning; WSi; deposition thickness; endpoint detection tool; photo luminescence measurement; Cleaning; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-1-4577-0392-8
Electronic_ISBN
1523-553X
Type
conf
Filename
5750218
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