DocumentCode
1753955
Title
Prediction of slip generation during rapid thermal processing
Author
Higuchi, Nao ; Matsumura, Hiroshi ; Watanabe, Shinji ; Shishiguchi, Seiichi
Author_Institution
Renesas Electron. Corp., Sagamihara, Japan
fYear
2010
fDate
18-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
Advanced device scaling requires thinner, higher quality oxides with low leakage and high reliability, and tighter process control, whereas a small temperature gradient on a heated wafer above 1000C causes a plastic deformation as crystalline slip, which strongly affects the device production yield. Hence, we propose a real-time technique to predict slip generation in rapid thermal processing (RTP) tools, and confirm the validity of the prediction model.
Keywords
plastic deformation; rapid thermal processing; semiconductor device manufacture; slip; advanced device scaling; crystalline; device production yield; heated wafer; plastic deformation; process control; rapid thermal processing tool; slip generation prediction; ISO standards;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-1-4577-0392-8
Electronic_ISBN
1523-553X
Type
conf
Filename
5750224
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