• DocumentCode
    1753955
  • Title

    Prediction of slip generation during rapid thermal processing

  • Author

    Higuchi, Nao ; Matsumura, Hiroshi ; Watanabe, Shinji ; Shishiguchi, Seiichi

  • Author_Institution
    Renesas Electron. Corp., Sagamihara, Japan
  • fYear
    2010
  • fDate
    18-20 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Advanced device scaling requires thinner, higher quality oxides with low leakage and high reliability, and tighter process control, whereas a small temperature gradient on a heated wafer above 1000C causes a plastic deformation as crystalline slip, which strongly affects the device production yield. Hence, we propose a real-time technique to predict slip generation in rapid thermal processing (RTP) tools, and confirm the validity of the prediction model.
  • Keywords
    plastic deformation; rapid thermal processing; semiconductor device manufacture; slip; advanced device scaling; crystalline; device production yield; heated wafer; plastic deformation; process control; rapid thermal processing tool; slip generation prediction; ISO standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2010 International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4577-0392-8
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5750224