Title :
Analysis of gate CD drift by EES
Author :
Harashima, Keiichi ; Ajima, Makoto ; Akimoto, Takeshi
Author_Institution :
Renesas Electron. Corp., Sagamihara, Japan
Abstract :
To reduce the gate CD variation, effect of Etch Tool variation to CD drift was investigate. On the basis of the statistical analysis, the prediction model of the gate CD was constructed. This model was used to estimate the effect of equipment parameter on gate CD variation. The decrease of the CD variation was achieved by adjusting the equipment parameter selected from this model on mass production of system LSI.
Keywords :
etching; mass production; semiconductor device manufacture; EES; engineering equipment system; etch tool variation; gate CD drift; gate CD variation; mass production;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
