Hydrogen concentration effect during RIE process for piezo resistor of MEMS pressure sensor

Author

Egami, Shin ; Nakagawa, Shinya ; Yoda, Tetsuya

Author_Institution

OMRON Corp., Yasu, Japan

fYear

2010

fDate

18-20 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

We studied the influences of RIE process conditions for the thick dielectric films on the counter doped resistor layer, and found that only CHF₃/Ar condition causes the decrease of the resistance. The optimization of CHF₃ partial pressure enabled to reduce nonuniformiy of the resistance. We considered that “hydrogen concentration effect” caused the decrease of the resistance and confirmed the mechanism by SIMS analysis and TCAD simulation. The optimal RIE process was applied to MEMS pressure sensor mass production, and product yield was improved.

Keywords

microsensors; piezoresistive devices; pressure sensors; secondary ion mass spectra; sputter etching; technology CAD (electronics); thick film resistors; MEMS pressure sensor mass production; RIE process; SIMS analysis; TCAD simulation; counter doped resistor layer; hydrogen concentration effect; piezo resistor; product yield; thick dielectric films; Crystals; Etching; Hydrogen; Micromechanical devices; Plasmas; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing (ISSM), 2010 International Symposium on

Conference_Location

Tokyo

ISSN

1523-553X

Print_ISBN

978-1-4577-0392-8

Electronic_ISBN

1523-553X

Type

conf

Filename

5750246