• DocumentCode
    1753980
  • Title

    Methods to eliminate pattern collapse in mass production by the resist replacement without changing model-based optical-proximity-correction

  • Author

    Matsui, Yoshinori ; Yuguchi, Takayuki ; Fujita, Masafumi ; Yamaguchi, Kazuto ; Yamazaki, Tomoya ; Uchiyama, Takayuki ; Takizawa, Masaharu

  • Author_Institution
    Renesas Electron. Corp., Yamagata, Japan
  • fYear
    2010
  • fDate
    18-20 Oct. 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Pattern collapse issue was successfully eliminated by the addition of hydrophobic and transparent additives into the resist. The additives form 25 nm-thick layer at the top of the new resist. The layer reduces maximum-tensile-stress acting on resist patterns by 22% due to the hidrophobicity. It was also found that the layer hardly affected the optical-proximity-effect (Difference of thorough-pitch CD: -0.8 ~ 0.6 nm). As a result, the same OPC could be used without further modification in the OPC model.
  • Keywords
    hydrophobicity; immersion lithography; mass production; photoresists; proximity effect (lithography); semiconductor industry; tensile strength; hydrophobic additives; immersion lithography; mass production; model-based optical-proximity-correction; optical-proximity-effect; pattern collapse; resist pattern; resist replacement; size 25 nm; tensile stress; transparent additives; Plastics; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2010 International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4577-0392-8
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5750249