DocumentCode
1753980
Title
Methods to eliminate pattern collapse in mass production by the resist replacement without changing model-based optical-proximity-correction
Author
Matsui, Yoshinori ; Yuguchi, Takayuki ; Fujita, Masafumi ; Yamaguchi, Kazuto ; Yamazaki, Tomoya ; Uchiyama, Takayuki ; Takizawa, Masaharu
Author_Institution
Renesas Electron. Corp., Yamagata, Japan
fYear
2010
fDate
18-20 Oct. 2010
Firstpage
1
Lastpage
3
Abstract
Pattern collapse issue was successfully eliminated by the addition of hydrophobic and transparent additives into the resist. The additives form 25 nm-thick layer at the top of the new resist. The layer reduces maximum-tensile-stress acting on resist patterns by 22% due to the hidrophobicity. It was also found that the layer hardly affected the optical-proximity-effect (Difference of thorough-pitch CD: -0.8 ~ 0.6 nm). As a result, the same OPC could be used without further modification in the OPC model.
Keywords
hydrophobicity; immersion lithography; mass production; photoresists; proximity effect (lithography); semiconductor industry; tensile strength; hydrophobic additives; immersion lithography; mass production; model-based optical-proximity-correction; optical-proximity-effect; pattern collapse; resist pattern; resist replacement; size 25 nm; tensile stress; transparent additives; Plastics; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-1-4577-0392-8
Electronic_ISBN
1523-553X
Type
conf
Filename
5750249
Link To Document