• DocumentCode
    1753983
  • Title

    Influence of airborne H2S on haze generation in ArF lithography

  • Author

    Tamaoki, Makiko ; Uemura, Eri ; Nishiki, Kazuhiro ; Hatano, Masayuki ; Aiga, Fumihiko

  • Author_Institution
    Toshiba Corp., Yokohama, Japan
  • fYear
    2010
  • fDate
    18-20 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Airborne H2S contamination exists in cleanroom air, scanner tool environment, and facility CDA. It was confirmed by laser radiation test that H2S causes haze formation by reaction with O3, and therefore H2S in the ArF lithography environment should be controlled in the same way as SO2. It is necessary to select an adequate chemical filter to remove H2S effectively.
  • Keywords
    air cleaners; argon compounds; filtration; hydrogen compounds; laser beam effects; lithography; surface contamination; ArF; H2S; O3; SO2; airborne contamination; airborne dihydrogen sulfide; chemical filter; cleanroom air; facility CDA; haze formation; haze generation; laser radiation test; lithography; scanner tool environment; Lithography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2010 International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4577-0392-8
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5750252
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1753983