DocumentCode
1754442
Title
Kesterite Successes, Ongoing Work, and Challenges: A Perspective From Vacuum Deposition
Author
Repins, I.L. ; Romero, M.J. ; Li, Jian V. ; Su-Huai Wei ; Kuciauskas, Darius ; Chun-Sheng Jiang ; Beall, C. ; DeHart, Clay ; Mann, Janek ; Wan-Ching Hsu ; Teeter, Glenn ; Goodrich, Al ; Noufi, Rommel
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
Volume
3
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
439
Lastpage
445
Abstract
Recent years have seen dramatic improvements in the performance of kesterite devices. The existence of devices of comparable performance, made by a number of different techniques, provides some new perspective on what characteristics are likely fundamental to the material. Here, we review progress in kesterite device fabrication, aspects of the film characteristics that have yet to be understood, and challenges in device development that remain for kesterites to contribute significantly to photovoltaic manufacturing. Performance goals, as well as characteristics of midgap defect density, free carrier density, surfaces, grain boundaries, grain-to-grain uniformity, and bandgap alloying are discussed.
Keywords
alloying; carrier density; copper compounds; energy gap; grain boundaries; semiconductor growth; semiconductor thin films; surface photovoltage; ternary semiconductors; thin film devices; tin compounds; vacuum deposition; zinc compounds; Cu2ZnSnS4; band gap alloying; device development; film characteristics; free carrier density; grain boundaries; grain-to-grain uniformity; kesterite device fabrication; midgap defect density; photovoltaic manufacturing; vacuum deposition; Grain boundaries; Performance evaluation; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Temperature measurement; Cu$_{2}$ ZnSnS$_{4}$ (CZTS); earth; kesterite; photovoltaic; thin film;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2012.2215842
Filename
6307808
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