• DocumentCode
    1754835
  • Title

    2-kV and 1.5-kA Semi-Insulating GaAs Photoconductive Semiconductor Switch

  • Author

    Shi, Wei ; Fu, Zhanglong

  • Author_Institution
    Dept. of Appl. Phys., Xi´´an Univ. of Technol., Xi´´an, China
  • Volume
    34
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    93
  • Lastpage
    95
  • Abstract
    Current as high as 1.5 kA has been obtained under a bias voltage of only 2 kV with a single photoconductive semiconductor switch (PCSS) excited by a laser pulse with the energy of 16 mJ. The PCSSs with gap lengths of 1.5 and 2 mm were fabricated by semi-insulating GaAs. The currents of the PCSSs were measured under different bias voltages and capacitance values. In addition, the PCSS operated at 2 kV and 1.5 kA with high stability.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor switches; GaAs; PCSS; current 1.5 kA; laser pulse; semiinsulating photoconductive semiconductor switch; single photoconductive semiconductor switch; voltage 2 kV; Capacitance; Capacitors; Gallium arsenide; Laser stability; Optical pulses; Optical switches; Gallium arsenide (GaAs); nonlinear mode; photoconductive semiconductor switches (PCSSs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2226558
  • Filename
    6377235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1754835