DocumentCode
1754883
Title
A Landscape of the New Dark Silicon Design Regime
Author
Taylor, Michael Bedford
Author_Institution
Univ. of California, San Diego, La Jolla, CA, USA
Volume
33
Issue
5
fYear
2013
fDate
Sept.-Oct. 2013
Firstpage
8
Lastpage
19
Abstract
Because of the breakdown of Dennard scaling, the percentage of a silicon chip that can switch at full frequency drops exponentially with each process generation. This utilization wall forces designers to ensure that, at any point in time, large fractions of their chips are effectively "dark silicon"--that is, significantly underclocked or idle for large periods of time. As exponentially larger fractions of a chip\´s transistors become dark, silicon area becomes an exponentially cheaper resource relative to power and energy consumption. This shift is driving a new class of architectural techniques that "spend" area to "buy" energy efficiency. All these techniques seek to introduce new forms of heterogeneity into the computational stack. This article begins by examining four promising directions--the "four horsemen"--that have emerged as top contenders for thriving in the dark silicon age. Each direction carries with its virtues deep-seated restrictions that require a careful understanding of the underlying trade-offs and benefits. Furthermore, the author proposes a set of evolutionary dark silicon design principles and examines how one of the "darkest" computing architectures of all, the human brain, trades off energy and area in ways that provide potential insights into more revolutionary directions for computer architecture.
Keywords
computer architecture; energy conservation; energy consumption; microprocessor chips; power aware computing; silicon; Dennard scaling breakdown; architectural techniques; chip transistors; computer architecture; dark silicon design regime; energy consumption; energy efficiency; evolutionary dark silicon design principles; power consumption; process generation; silicon chip; CMOS integrated circuits; Capacitance; Dark silicon; Electric breakdown; Energy efficiency; Multicore processing; Semiconductor device manufacture; Silicon; Threshold voltage; Transistors; Dennard scaling; dark silicon; four horsemen; multicore; utilization wall;
fLanguage
English
Journal_Title
Micro, IEEE
Publisher
ieee
ISSN
0272-1732
Type
jour
DOI
10.1109/MM.2013.90
Filename
6583151
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