Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET

Author

Alam, Md Nur Kutubul ; Islam, Md Shariful ; Kibria, Md Golam ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

Volume

61

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

3910

Lastpage

3913

Abstract

Quasi-static capacitance voltage (CV) characteristics of In_1-xGaxSb-on-insulator field-effect transistor (FET) are investigated using 1-D coupled Schrödinger-Poisson equations. Here, we report for the first time the staircase trend in the CV characteristics of such ultrathin-body FET. This observation is well correlated with the gate-bias-dependent electron concentration in different subbands. It is revealed that the staircase trend tends to disappear as the channel thickness increases above 15 nm. While the channel thickness and doping concentration-dependent shifts in CV curves are found to be significant, the composition-dependent shift is almost negligible.

Keywords

Poisson equation; Schrodinger equation; field effect transistors; indium compounds; 1D coupled Schrödinger-Poisson equation; In_1-xGa_xSb; In_1-xGa_xSb-on-Insulator FET; anomalous staircase CV characteristics; channel thickness; composition-dependent shift; doping concentration; field-effect transistor; gate-bias-dependent electron concentration; quasistatic capacitance voltage characteristics; ultrathin-body FET; Capacitance; Capacitance-voltage characteristics; Doping; Educational institutions; Field effect transistors; Logic gates; Silicon; Capacitance voltage (CV) characteristics; InGaSb; field-effect transistor (FET); self-consistent analysis; staircase; ultrathin body;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2358650

Filename

6912937