DocumentCode :
1755188
Title :
Study of Work-Function Variation for High- 
/Metal-Gate Ge-Source Tunnel Field-Effect Transistors
Author :
Youngtaek Lee ; Hyohyun Nam ; Jung-Dong Park ; Changhwan Shin
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Seoul, Seoul, South Korea
Volume :
62
Issue :
7
fYear :
2015
fDate :
42186
Firstpage :
2143
Lastpage :
2147
Abstract :
The work-function variation (WFV) in high-κ/ metal-gate (HK/MG) Ge-source tunnel FETs (TFETs) is evaluated using technology computer-aided design simulations. By matching the simulation results with the plot for the ratio of the average grain size to the gate area (i.e., the RGG plot), we find that the slope in the RGG plot for the TFET can be significantly altered depending on three main factors, namely, the gate width, average grain size, and equivalent oxide thickness. In addition, it is verified that the variation of channel potential affects the WFV-induced threshold voltage variation in HK/MG Ge-source TFETs.
Keywords :
elemental semiconductors; field effect transistors; germanium; technology CAD (electronics); tunnelling; Ge; HK-MG TFET; RGG plot; WFV; average grain size ratio; channel potential variation; computer-aided design simulation; high-κ-metal-gate Ge-source tunnel field-effect transistor; work-function variation; Computers; Field effect transistors; Grain size; Logic gates; Tin; Tunneling; Characterization; RGG; random variation; tunnel FET (TFET); variability; work-function variation (WFV); work-function variation (WFV).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2436815
Filename :
7118152
Link To Document :
