Title :
A Thickness-Mode AlGaN/GaN Resonant Body High Electron Mobility Transistor
Author :
Ansari, A. ; Rais-Zadeh, Mina
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
A multigigahertz AlGaN/GaN resonant body transistor (RBT) is reported, wherein the mechanical resonance and electrical signal modulation are achieved simultaneously. A 175-Å-thick AlGaN layer is used as the piezoelectric transduction layer, and the 2-D electron gas present at the AlGaN/GaN interface is employed as the bottom electrode as well as the transistor conducting channel. The carrier concentration of the channel is modulated when the device undergoes acoustic strain. A quality factor of 250 and acoustic transconductance of 25 μS is achieved at resonance frequency of 4.23 GHz, marking the highest frequency and highest transconductance reported to date for GaN-based RBTs. The frequency×Q of this device is among the best reported for GaN-based resonators.
Keywords :
III-V semiconductors; MOCVD; Q-factor; aluminium compounds; carrier density; electrodes; gallium compounds; high electron mobility transistors; microwave transistors; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; AlGaN-GaN; acoustic transconductance; carrier concentration; electrical signal modulation; frequency 4.23 GHz; mechanical resonance; piezoelectric transduction layer; quality factor; size 175 angstrom; thickness-mode resonant body high electron mobility transistor; transistor conducting channel; Acoustics; Aluminum gallium nitride; Electrodes; Gallium nitride; HEMTs; Logic gates; Transconductance; $Q$ ; GaN; high electron mobility transistor (HEMT); microelectromechanical system (MEMS) resonator; resonant body transistor (RBT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2302991