Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

In this letter, the effects of the interface acceptor-like traps on the transient responses of AlGaN/GaN high-electron mobility transistors (HEMTs) are investigated by means of experimental measurements and numerical simulations. The variation trends of the drain current I_DS stimulated by the gate (V_GS) and drain (V_DS) turn-on voltage pulses have been analyzed. The successive numerical simulations are carried out on the test structure, into which a trapping region at the AlGaN/GaN interface is introduced. The same variation trends are observed on both of the simulated V_GS and V_DS turn-on pulse measurements. The observation proves that the interface acceptor-like trap is the factor dominating the turn-on transient response of the HEMT devices.