Title :
New Planar Junction Edge Termination Technique Using OPTVLD With a Buried Layer
Author :
Junji Cheng ; Xingbi Chen
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices of China, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new planar junction edge termination technique, using the optimum variation lateral doping with a buried layer, is proposed and studied. A voltage equal to 100% of the breakdown voltage of a single-sided abrupt parallel-plane junction with the same substrate can be achieved within a smallest area on the surface. The proposed technique can be realized by a process compatible with conventional CMOS or BiCMOS technologies and verified by the results of numerical simulations.
Keywords :
BiCMOS integrated circuits; buried layers; numerical analysis; semiconductor doping; BiCMOS technologies; CMOS technologies; OPTVLD; buried layer; numerical simulations; optimum variation lateral doping; parallel-plane junction; planar junction edge termination; BiCMOS; CMOS; electric field profile; optimum variation lateral doping (OPTVLD); planar junction edge termination technique; power devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2264342
