DocumentCode :
1756957
Title :
Analysis of Lasing From Direct Transition in Ge-on-Si
Author :
Chow, W.W. ; Kabuss, J. ; Carmele, Alexander
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
19
Issue :
4
fYear :
2013
fDate :
July-Aug. 2013
Firstpage :
1502309
Lastpage :
1502309
Abstract :
This paper describes a theoretical investigation of lasing from the direct, Γ-point transition in bulk germanium grown on silicon substrate. Relationships between desired gain and required current density are computed using a screened Hartree- Fock gain model for structures of different tensile strains and n-doping densities. The calculations indicate that for unstrained Ge, high free-carrier absorption and gain saturation may lead to no positive net gain regardless of excitation. With 0.2% tensile strain, the theory predicts possible lasing under laboratory conditions, but uncertainties in free-carrier absorption and Auger losses make difficult definitive predictions for a practical device. Results for 0.6% tensile strain and > 1019 cm-3 n-doping gives a more definitive prediction of constant wave lasing with threshold current density of ~1 kA/cm2.
Keywords :
HF calculations; elemental semiconductors; germanium; laser theory; semiconductor lasers; silicon; Auger loss; Ge-Si; Hartree-Fock gain model; current density; direct transition; free carrier absorption; gain saturation; high free-carrier absorption; tensile strain; Absorption; Charge carrier density; Charge carrier processes; Current density; Lasers; Nickel; Tensile strain; Integrated optoelectronics; light emitters; silicon photonics;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2013.2249049
Filename :
6479227
Link To Document :
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