Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

Author

Injun Hwang ; Jaejoon Oh ; Hyuk Soon Choi ; Jongseob Kim ; Hyoji Choi ; Joonyong Kim ; Soogine Chong ; Jaikwang Shin ; U-In Chung

Author_Institution

Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea

Volume

34

Issue

5

fYear

2013

fDate

41395

Firstpage

605

Lastpage

607

Abstract

A pathway to increase the threshold voltage (V_TH) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of V_TH in p-GaN gate HEMTs. In order to increase the depletion width, we devise a new device structure of p-GaN gate HEMT having a source-connected p-GaN bridge. We demonstrate that a bridged p-GaN gate HEMT structure increases the V_TH from 0.93 to 2.44 V.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; high-electron-mobility transistor; hole depletion width; increased threshold voltage; source-connected gate HEMT; voltage 0.93 V to 2.44 V; Aluminum gallium nitride; Bridge circuits; Gallium nitride; Gold; HEMTs; Logic gates; MODFETs; High-electron-mobility transistor (HEMT); Schottky contact; p-GaN bridge; p-GaN gate HEMT; source-connected p-GaN; threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2249038

Filename

6479233